This article is cited in 1 paper

Morphology and structural and electrical parameters of float-zone Si(111) single crystals

K. B. Fritzler, E. M. Trukhanov, V. V. Kalinin

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The surface structure of silicon single crystals grown in the [111] direction using the floating zone technique and the distribution of electric parameters of these crystals over the crystal length are investigated. Geometrical parameters of the morphological characteristics of deltoidal icositetrahedral habit are determined. It is demonstrated that, similarly to ridgelike protrusions, bulges are morphological elements of the ingot surface that characterize the rhombododecahedral and deltoidal icositetrahedral growth habits. It is established that, in the region of bulges, the nonequilibrium charge carriers lifetime distribution is more inhomogeneous due to instability of the crystallization rate.

Received: 19.02.2015

 English version: Technical Physics Letters, 2015, 41:8, 731–733

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