This article is cited in 7 papers

Electroforming and bipolar resistive switching in Si–SiO$_2$–V$_2$O$_5$–Au binary oxide structure

V. V. Putrolaynen, A. A. Velichko, P. P. Boriskov, A. L. Pergament, G. B. Stefanovich, N. A. Kuldin

Petrozavodsk State University

Abstract: We have studied bipolar resistive switching (BRS) with memory in a binary oxide structure Si–SiO$_2$–V$_2$O$_5$–Au manufactured by reactive magnetron sputtering. A physical model is proposed that explains the formation of a BRS structure with a nanosized silicon channel in SiO$_2$ and reversible modulation of conductivity in thin V$_2$O$_5$ layer at the channel boundary. The radius of this silicon channel is found from calculations based on the heat equation and atomic force microscopy data.

Received: 26.02.2015

 English version: Technical Physics Letters, 2015, 41:7, 672–675

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