V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 13,Pages <nobr>72

This article is cited in 2 papers

The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

V. Ya. Aleshkin^ab, N. V. Dikareva^c, A. A. Dubinov^ab, B. N. Zvonkov^c, K. E. Kudryavtsev^ab, S. M. Nekorkin^c, A. V. Novikov^ab, P. A. Yunin^ab, D. V. Yurasov^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The waveguide effect of InGaAs quantum wells in a GaAs structure grown on a Si substrate with a relaxed Ge buffer layer has been studied. After an excitation power density of 35 kW/cm$^2$ was reached at liquid-nitrogen temperature, several stimulated emission lines were observed in the energy range of 1350–1360 meV.

Received: 17.11.2014