This article is cited in 6 papers

Photoelectric properties of an array of axial GaAs/AlGaAs nanowires

R. V. Grigor'ev^a, I. V. Shtrom^abc, N. R. Grigor'eva^a, B. V. Novikov^a, I. P. Sotnikov^bcde, Yu. B. Samsonenko^bdc, A. I. Khrebtov^b, A. D. Bouravlev^adc, G. È. Cirlin<sup>adcf

a</sup> V. A. Fock Institute of Physics, Saint-Petersburg State University
^b St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Ioffe Institute, St. Petersburg
^e Saint Petersburg Electrotechnical University "LETI"
^f St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia

Abstract: The results of studies of photoelectric properties of an array of axial $n$-type As/Al$_x$Ga$_{1-x}$As ($x\approx$ 0.3) nanowires grown using molecular beam epitaxy on a $p$-type silicon substrate are presented. The ability to separate charges efficiently in a wide spectral range (from 450 to 1100 nm) is demonstrated. Such properties are important for designing active elements of photodetectors and solar cells.

Received: 04.11.2014

 English version: Technical Physics Letters, 2015, 41:5, 443–447

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