Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

V. Ya. Aleshkin^ab, N. V. Dikareva^c, A. A. Dubinov^ab, B. N. Zvonkov^c, Z. F. Krasil'nik^ab, S. M. Nekorkin<sup>c

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: A comparative study of the electrical and optical characteristics of laser diodes based on GaAs and In$_{0.01}$Ga$_{0.99}$As structures with quantum wells grown on Ge substrates has been performed. It is established that lasers based on In$_{0.01}$Ga$_{0.99}$As structure are more perfect and exhibit characteristics comparable with those of lasers based on GaAs.

 English version: Technical Physics Letters, 2015, 41:3, 304–306

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