Yu. N. Buzynin, A. V. Vodopyanov, S. V. Golubev, M. N. Drozdov, Yu. N. Drozdov, A. Yu. Luk'yanov, D. A. Mansfeld, O. I. Khrykin, V. I. Shashkin, P. A. Yunin, “High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 6,Pages <nobr>17

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High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation

Yu. N. Buzynin^ab, A. V. Vodopyanov^c, S. V. Golubev^c, M. N. Drozdov^ab, Yu. N. Drozdov^ab, A. Yu. Luk'yanov^a, D. A. Mansfeld^c, O. I. Khrykin^a, V. I. Shashkin^ab, P. A. Yunin^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: Hexagonal single-crystalline indium nitride (InN) films on (0001)-oriented sapphire (Al$_2$O$_3$) and (111)-oriented fianite (yttria-stabilized zirconia, YSZ) substrates and on (0001)-oriented GaN/Al$_2$O$_3$ templates have been grown at a record high rate of 10 $\mu$m/h by the method of metalorganic vapor phase epitaxy with nitrogen activation in plasma of electron cyclotron resonance discharge generated by gyrotron radiation. It is established that the use of fianite substrates significantly improves the structural perfection and photoluminescent properties of InN films as compared to those grown on sapphire and templates. Undoped InN films exhibit n-type conductivity with electron concentrations within $n$ = (8.0 $\cdot$ 10$^{19}$ – 4.9 $\cdot$ 10$^{20}$) cm$^{-3}$ and room-temperature mobilities up to 180 cm$^2$/(V $\cdot$s).

Received: 26.09.2014