V. G. Dubrovskii, “The theory of nucleation and polytypism of III–V semiconductor nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 4,Pages <nobr>102

This article is cited in 4 papers

The theory of nucleation and polytypism of III–V semiconductor nanowires

V. G. Dubrovskii^ab

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The polytypism between cubic and hexagonal phases in III–V semiconductor nanowires has been analyzed on the basis of nucleation theory. Model calculations have been performed for the parameters of GaAs nanowhiskers grown on Au catalysts according to the vapor-liquid-solid (VLS) mechanism. New results are obtained for the critical chemical potentials and the dependence of percentage content of wurtzite phase on the concentration of group III element (Ga) in the liquid drop. These results have been used for the interpretation of some experimental data on the crystalline phase of Au-catalyzed GaAs nanowires grown by various epitaxial techniques.

Received: 17.09.2014