P. V. Volkov, A. V. Goryunov, A. Yu. Luk'yanov, A. D. Tertyshnik, “Measurements of the semiconductor substrate thickness with a low-coherence tandem interferometer at a nonstationary temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 3,Pages <nobr>8

This article is cited in 3 papers

Measurements of the semiconductor substrate thickness with a low-coherence tandem interferometer at a nonstationary temperature

P. V. Volkov, A. V. Goryunov, A. Yu. Luk'yanov, A. D. Tertyshnik

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: We propose an original technique for measuring minor variations in the semiconductor structure thickness at nonstationary temperature with the use of the principle of low-coherence tandem interferometry. The attained temperature and thickness resolutions are $\pm$ 2$^\circ$C and $\pm$ 2 nm, respectively.

Received: 28.07.2014