This article is cited in 6 papers

Thin single-crystal Ge layers on 2" Si substrates

V. G. Shengurov^ab, S. A. Denisov^ab, V. Yu. Chalkov^a, Yu. N. Buzynin^ab, M. N. Drozdov^ab, A. N. Buzynin^c, P. A. Yunin<sup>ba

a</sup> Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: Conditions for preparing thin homogeneous mirror-smooth Ge layers on 2" Si substrates by hot wire chemical vapor-phase deposition have been determined. Ge layers 200 nm thick have a structure of epitaxial mosaic single crystal with almost completely relaxed elastic stresses. The X-ray diffraction rocking curve half-width is less than 6'. The density of grown-in dislocations in Ge layers is in the range of (3–6) $\cdot$ 10$^5$ cm$^{-2}$, and the rms surface roughness does not exceed 0.8 nm.

 English version: Technical Physics Letters, 2015, 41:1, 36–39

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