This article is cited in 1 paper

Formation of cellular structure in SiGe layers under nanosecond laser irradiation

E. I. Gatskevich^a, G. D. Ivlev^b, V. L. Malevich<sup>cd

a</sup> Belarusian National Technical University
^b Belarusian State University, Minsk
^c B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^d St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the binary melt due to a segregation element separation was analyzed. Calculation results were compared with known experimental data characterizing the duration of laser-induced phase transformations and average sizes of the cells (which are formed due to the effect of concentration supercooling) as a function of the power density in the laser pulse.

Received: 01.09.2014

 English version: Technical Physics Letters, 2015, 41:1, 21–24

Bibliographic databases:

•