Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer

A. S. Gudovskikh^ab, A. I. Baranov^a, A. V. Uvarov^a, E. A. Vyacheslavova^a, A. A. Maksimova^ab, D. A. Kirilenko^c, G. E. Yakovlev^b, V. I. Zubkov<sup>b

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"
^c Ioffe Institute, St. Petersburg

Abstract: The structural and electronic properties of InP layers and the GaP/InP interface formed by plasma-enhanced chemical atomic layer deposition on a Si substrate were studied. When InP was grown on a Si substrate with a GaP sublayer (20 nm), a sharp InP/GaP interface was observed and the properties of the GaP/Si interface were preserved. Measurements of the carrier concentration profiles using electrochemical CV profiling for the InP/GaP/Si heterostructure allowed us to estimate $\Delta E_C$ at the GaP/InP interface as 0.55 $\pm$ 0.05 eV.

Keywords: indium phosphide, gallium phosphide, interface, atomic layer deposition.

Received: 27.11.2024
Revised: 04.01.2025
Accepted: 10.01.2025

DOI: 10.61011/PJTF.2025.09.60226.20200

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