AC magnetoresistive effect in a device based on a silicon-on-insulator structure

D. A. Smolyakov, M. V. Rautskii, A. S. Tarasov

L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk

Abstract: The results of studies of the silicon on insulator (SOI) structure Fe/Si/SiO$_2$/$p$-Si and the simplest device based on it in the form of a dual Schottky diode are presented. The influence of an external magnetic field is detected. The obtained values of magnetoresistance MR on alternating current are up to 500% at a field of 1.5 T and up to 3500% in a field of 9 T. This effect is explained by the presence of impurity states at the dielectric/semiconductor interface and the process of their recharging. The energies of these states have been determined.

Keywords: magnetoresistance, soi-structures, Schottky-diode, magnetic field, impurity states.

Received: 25.10.2024
Revised: 10.12.2024
Accepted: 12.12.2024

DOI: 10.61011/PJTF.2025.08.60155.20166

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