Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode

M. A. Lobaev^a, D. B. Radishev^a, A. L. Vikharev^a, A. M. Gorbachev^a, S. A. Bogdanov^a, V. A. Isaev^a, V. A. Kukushkin^a, S. A. Kraev^a, A. I. Okhapkin^a, E. A. Arkhipova^a, E. V. Demidov^a, M. N. Drozdov^a, R. I. Khaibullin<sup>b

a</sup> Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod
^b Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences

Abstract: Electroluminescence of germanium-vacancy color centers (GeV centers) in a diamond $p$–$i$–$n$ diode has been demonstrated for the first time. To create color centers, a layer implanted with germanium ions was created in the inner region of the diode. A narrow line at a wavelength of 602.9 nm was detected in the emission spectrum, corresponding to the emission of a germanium-vacancy color center in a negative charge state. Electroluminescence spectra of germanium-vacancy and silicon-vacancy color centers were compared.

Keywords: CVD diamond, $p$–$i$–$n$ diode, color centers, electroluminescence.

Received: 18.10.2024
Revised: 04.12.2024
Accepted: 08.12.2024

DOI: 10.61011/PJTF.2025.08.60154.20158

Bibliographic databases:

•