Metastable states in the electronic subsystem of GaAs/Al$_x$Ga$_{1-x}$As heterostructures for quantum well infrared photodetectors

S. A. Kolosov, V. S. Krivobok, D. A. Pashkeev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: A metastable rearrangement of transport properties as well as photoresponse in the far IR spectral range was detected for a GaAs/Al$_x$Ga$_{1-x}$As heterostructure with silicon-doped quantum wells upon short-term illumination with near-IR emission. It is shown that this effect is associated with silicon DX centers formed in the vicinity of the GaAs/Al$_x$Ga$_{1-x}$As interfaces.

Keywords: IR photodetector, quantum well, DX center, molecular beam epitaxy.

Received: 28.08.2024
Revised: 06.10.2024
Accepted: 10.10.2024

DOI: 10.61011/PJTF.2025.03.59823.20095

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