Photonic and electrical output signal components in optical sensors based on $p$-InAsSbP/$n$-InAs(Sb) monolithic heterostructures

G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, G. Yu. Sotnikova

Ioffe Institute, St. Petersburg

Abstract: Monolithic optical sensors based on low shunt resistance $p$-InAsSbP/$n$-InAs and $p$-InAsSbP/$n$-InAsSb heterostructures grown onto low resistivity $n$-InAs substrates equipped with trans-impedance amplifiers suffer from output electrical signal distortions. The paper presents analysis of the above distortions and equivalent circuit for output electrical signal analysis and measurements as well as recommendations for suppression of interference of signal components have been suggested.

Keywords: optical sensors, atr sensors, optopairs, $p$-InAsSbP/$n$-InAs(Sb) heterostructures.

Received: 04.07.2022
Revised: 12.10.2022
Accepted: 20.10.2022

DOI: 10.21883/PJTF.2022.23.53952.19295

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