Criterion for the growth selectivity of III–V and III–N nanowires on masked substrates

V. G. Dubrovskii^a, E. D. Leshchenko<sup>b

a</sup> Saint Petersburg State University, St. Petersburg, Russia
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: A model is developed for the initial stage of nucleation of III–V nanowires including nitrides (III–V NWs) and other nanostructures grown by selective area epitaxy on masked substrates with regular arrays of pinholes. A criterion for the growth selectivity is obtained, which ensures nucleation of III-V NWs within the pinholes but not on a mask surface. The temperature, group III and V fluxes, pinhole radius and pitch dependences of the selective growth zones are analyzed.

Keywords: III–V nanowires, selective area epitaxy, masked substrate, nucleation.

Received: 26.08.2022
Revised: 26.08.2022
Accepted: 25.09.2022

DOI: 10.21883/PJTF.2022.22.53798.19350

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