Anisotropic photoconductivity excited in a semiconductor by two-frequency optical radiation

P. A. Ziaziulia^a, V. L. Malevich<sup>bc

a</sup> Belarusian State University, Minsk, Republic of Belarus
^b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, Belarus
^c Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus

Abstract: Anisotropic photoconductivity at a difference frequency, excited in a semiconductor by linearly polarized two-frequency optical radiation, is considered. The anisotropy of the photoconductivity arises due to the optical alignment of photoexcited electrons momenta and dependence of their effective mass and momentum relaxation time on energy. It is shown that the contribution of the anisotropic photoconductivity to the photocurrent at the difference frequency lying in the terahertz frequency range can be comparable with that of the isotropic photoconductivity. This effect can manifest itself in photoconductive antennae, devices used to generate terahertz radiation.

Keywords: anisotropic photoconductivity, photomixing, terahertz radiation, photoconductive antenna.

Received: 19.07.2022
Revised: 01.09.2022
Accepted: 14.09.2022

DOI: 10.21883/PJTF.2022.21.53707.19313

Bibliographic databases:

•