Kinetics of radial growth of III–V nanowires in vapor phase epitaxy

V. G. Dubrovskii, S. V. Mikushev

Saint Petersburg State University, St. Petersburg, Russia

Abstract: A model is proposed for the radial growth of III–V nanowires (NWs) in vapor phase epitaxy on masked substrates, which provides explicitly the NW radius as a function of its length. Analytical solutions are obtained for the NW radius in different stages of growth. A comparison of the model with the data on the growth kinetics of GaAs NWs is presented and a good correlation with the data is demonstrated.

Keywords: III–V nanowires, radial growth, vapor phase epitaxy, modeling.

Received: 12.08.2022
Revised: 12.08.2022
Accepted: 02.09.2022

DOI: 10.21883/PJTF.2022.20.53694.19340

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