This article is cited in 2 papers

Collapsing Gunn domains as a mechanism of self-supporting conducting state in reversely biased high-voltage GaAs diodes

M. S. Ivanov, A. V. Rozhkov, P. B. Rodin

Ioffe Institute, St. Petersburg, Russia

Abstract: Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the appearance of narrow (of the order of a micrometer) ionizing Gunn domains, the so-called collapsing domains, in the electron-hole plasma. Impact ionization in collapsing domains and in the edge (cathode and anode) domains of a strong electric field ( 300 kV/cm) maintains a high concentration of nonequilibrium carriers ($\ge$ 10$^{17}$ cm$^{-3}$) during the entire duration of the applied reverse polarity voltage pulse.

Keywords: high-voltage GaAs diodes, impact ionization, subnanosecond switches, Gunn effect, lock-on effect.

Received: 28.07.2022
Revised: 01.09.2022
Accepted: 01.09.2022

DOI: 10.21883/PJTF.2022.20.53693.19326

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