Modeling the compositional profiles across axial InSb/GaInSb/InSb nanowire heterostructures

E. D. Leshchenko^a, V. G. Dubrovskii<sup>b

a</sup> Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
^b Saint Petersburg State University, St. Petersburg, Russia

Abstract: The formation of the double InSb/GaInSb/InSb heterostructure in self-catalyzed and Au-catalyzed nanowires is studied theoretically. We calculate the compositional profiles across the axial heterostructures and study the influence of different growth parameters on the heterointerface properties, including temperature, Sb and Au concentrations.

Keywords: III–V nanowires, axial heterostructure, heterointerface, modeling.

Received: 12.08.2022
Revised: 12.08.2022
Accepted: 17.08.2022

DOI: 10.21883/PJTF.2022.19.53590.19339

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