Features of silicon carbide synthesis by cold implantation of carbon recoil atoms

V. I. Zinenko^a, Yu. A. Agafonov^a, V. V. Saraikin^b, V. G. Eremenko^a, D. M. Sedlovets^a, D. V. Irzhak<sup>a

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
^b State Research Institute of Physical Problems, Moscow, Zelenograd, Russia

Abstract: The Auger electron spectroscopy method confirmed a high concentration of carbon atoms ($\sim$85 at.%) introduced into silicon by cold implantation of recoil atoms. Carbon atoms are concentrated in a thin ($\sim$5 nm) near-surface region of silicon. Annealing of such a structure did not reveal a noticeable diffusion of carbon, which prevents obtaining a layer of SiC with a thickness of more than a few nm. This problem was solved by using radiation-enhanced diffusion. This made it possible to control the distribution profiles of carbon atoms in a wide range. Annealing at 1150$^\circ$C allowed obtaining layers of amorphous-crystalline SiC with a thickness of 50–150 nm. Higher annealing temperatures are required to obtain a single-crystal SiC film.

Keywords: cold implantation, radiation-enhanced diffusion, silicon carbide, recoil atom, thin films.

Received: 04.04.2022
Revised: 31.05.2022
Accepted: 31.05.2022

DOI: 10.21883/PJTF.2022.14.52865.19212

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