Synthesis of Au/Si nanostructures by STM lithography

D. V. Lebedev^abc, V. A. Shkoldin^ad, A. M. Mozharov^b, A. E. Petukhov^b, A. O. Golubok^c, A. V. Arkhipov^e, I. S. Mukhin^ae, V. G. Dubrovskii<sup>b

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Saint Petersburg State University, St. Petersburg, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia
^d ITMO University, St. Petersburg, Russia
^e Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

Abstract: A technique for synthesizing nanostructures by current lithography in a scanning tunneling microscope (STM lithography) in layered Au/Si structures has been developed. An experimental dependence of the geometric dimensions of the created nanostructures on the time of current STM lithography has been obtained. A theoretical model for the growth of nanostructures is proposed, which explains the nonlinear dependence of the radius of the obtained nanostructures on time with saturation in the region of large radii.

Keywords: Au/Si nanostructures, STM lithography, growth rate, modeling.

Received: 15.04.2022
Revised: 26.04.2022
Accepted: 29.04.2022

DOI: 10.21883/PJTF.2022.12.52672.19224

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