Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

A. S. Pashchenko^a, O. V. Devitsky^ab, L. S. Lunin^a, M. L. Lunina^a, O. S. Pashchenko<sup>a

a</sup> Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
^b North-Caucasus Federal University, Stavropol, Russia

Abstract: GaInAsSbBi solid solutions with different Bi contents are synthesized on $n$-GaSb substrates with a misorientation of 6o between the (100) and (111)A planes. Structural properties and morphology of GaInAsSbBi thin films are studied. Transmission electron microscopy and X-ray diffraction have shown that the films have a polycrystalline structure. It is found that an increase in the Bi concentration in the solid solution leads to a decrease in the average size of the region of coherent scattering by (111) reflection from 20 to 5 nm. It is shown that in films with a lower content of Bi, the thickness of the transition amorphous layer at the layer-substrate heterointerface decreases.

Keywords: solid solutions, GaInAsSbBi, GaSb, III–V compounds.

Received: 14.02.2022
Revised: 27.03.2022
Accepted: 30.03.2022

DOI: 10.21883/PJTF.2022.10.52552.19164

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