Abstract:
Arrays of two types of Si whiskers (with ordered “classical” and “triangular” structures) coated on the tips with a thin layer of cubic SiC polytype (3C-SiC) were obtained. The results of X-ray phase analysis, energy-dispersive spectroscopy and Raman spectroscopy indicate the formation of a thin layer of the said SiC polytype on the tips of Si whiskers, as well as the presence of free fullerene-like carbon. On samples with a triangular structure, where part of the incoming Si vapor goes to film growth by the vapor-crystal mechanism, more intense formation of silicon oxide (SiO$_2$) and polysilicic acids is observed, which is associated with a larger free area of the active surface of the Si substrate.
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