Features of SnO$_2$/Ga$_2$O$_3$/GaN/Al$_2$O$_3$ multilayer film domain structure

M. E. Boiko^a, M. D. Sharkov^a, A. M. Boiko^a, P. N. Butenko^a, A. V. Almaev^b, V. I. Nikolaev<sup>a

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Tomsk State University, Tomsk, Russia

Abstract: In a film SnO$_2$/Ga$_2$O$_3$/GaN/Al$_2$O$_3$ grown via vapor-phase epitaxial techniques a study of domains formation has been performed with the help of X-ray diffraction. The estimations of domain sizes in the film normal direction within film layers and the substrate have been obtained. Reduction of crystal perfectness in layers along their remoteness from the substrate has been stated. The hypothesis of amorphous or nanosized structure of the upside tin dioxide layer has been formulated.

Keywords: semiconductor heterostructures, multilayer films, X-ray diffraction, domain structure, crystal perfectness.

Received: 21.06.2024
Revised: 20.08.2024
Accepted: 21.08.2024

DOI: 10.61011/PJTF.2025.01.59518.20018

Bibliographic databases:

•