Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal

V. B. Shmagin^a, A. V. Novikov^ab, A. N. Yablonskii^a, M. V. Stepikhova^a, D. V. Yurasov^a, A. N. Mikhaylov^b, D. I. Tetelbaum^b, E. E. Rodyakina^cd, E. E. Morozova^a, D. V. Shengurov^a, S. A. Kraev^a, P. A. Yunin^a, M. V. Shaleev^a, A. I. Belov<sup>b

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b National Research Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
^c Novosibirsk State University, Novosibirsk, Russia
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia

Abstract: Lateral $p$–$i$–$n$-LEDs were fabricated on structures with Ge(Si) self-assembled islands using local ion implantation. The use of preliminary amorphization and solid-phase recrystallization of the implanted areas allowed to decrease the impurity activation temperature down to 600$^\circ$C, which significantly reduced the detrimental effect of post-implantation annealing on the luminescence signal of Ge(Si) islands at room temperature in the range of 1.3–1.55 microns. The electroluminescence signal from Ge(Si) islands was increased by more than an order of magnitude due to the embedding of photonic crystals in the $i$-region of diodes.

Keywords: silicon, light emitting diodes, Ge(Si) islands, photonic crystals, implantation.

Received: 29.08.2023
Revised: 29.08.2023
Accepted: 25.09.2023

DOI: 10.61011/PJTF.2023.22.56592.19713

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