Multilevel memristor structures based on $a$-Si with enhanced resistive switching stability and low compliance currents

D. V. Ichyotckin^ab, M. E. Shiryaev^a, D. V. Novikov^a, E. A. Lebedev^a, V. V. Ryl'kov<sup>bc

a</sup> National Research University of Electronic Technology, Moscow, Russia
^b National Research Centre "Kurchatov Institute", Moscow, Russia
^c Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia

Abstract: Using the magnetron deposition and thermal sputtering techniques, we synthesized the Cr/Cu–Ag/$a$-Si/natural oxide SiO$_x/p^{++}$-Si structures with enhanced resistive switching stability (more than 10$^4$ write/erase cycles), which is several orders of magnitude higher than previously reported. At the same time, the structures demonstrate the multilevel character of switching at compliance currents of up to 1 $\mu$A and have the retention time of resistive states of at least 10 min. A possible mechanism for the formation of stable resistive switching is discussed.

Keywords: memristors, $a$-Si, magnetron deposition, multilevel resistive switching, low compliance currents.

Received: 30.06.2023
Revised: 05.09.2023
Accepted: 11.09.2023

DOI: 10.61011/PJTF.2023.20.56346.19672

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