Pisma v Zhurnal Tekhnicheskoi Fiziki, 2023 Volume 49, Issue 19,Pages 11–14(Mi pjtf7080)
Change of the loop directions on the high-frequency capacitance-voltage characteristics at a critical bias voltage, dielectric properties and memory effects in the Sr$_{0.6}$Ba$_{0.4}$Nb$_2$O$_6$/SrTiO$_3$/Si(001) heterostructure
Abstract:
A $c$-oriented barium-strontium niobate film of composition Sr$_{0.6}$Ba$_{0.4}$Nb$_2$O$_6$ (SBN60) with a thickness of 600 nm was grown by high-frequency cathode sputtering on a Si(001) substrate with a preliminarily deposited SrTiO$_3$ (STO) sublayer. It is shown that the film belongs to the relaxor ferroelectrics. When analyzing the high-frequency capacitance-voltage characteristics of the SBN60/STO/Si(001) heterostructure at $U$ = 0–24 V, a critical electric voltage ($\sim$10 V) was established, in the vicinity of which a change in the $C(U)$ loop direction was observed. It is shown that the reason of loop direction change may be due to an increase in the role of the built-in charge, which is formed at the film-substrate interface, as the amplitude U increases, simultaneously with ferroelectric polarization switching in the SBN60 film. The causes of the revealed regularities and their role in the study of memory effects in the SBN60/STO/Si(001) heterostructure are discussed.
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