X-ray luminescence of ZnO films more than 100 $\mu$m thick

I. D. Venevtsev^a, A. È. Muslimov<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
^b FSRC "Crystallography and Photonics" RAS, Moscow, Russia

Abstract: For the first time, the work presents a thin-film X-ray scintillator based on ZnO with a thickness of more than 100 $\mu$m with luminescence decay kinetics of the order of 1.1 ns (including the width of the excitation pulse). The absorption edge of the film scintillator is shown to be located in the region of 388 nm. The total transmittance of the sample in the visible and near infrared region reaches 40%. The X-ray excited luminescence spectrum is represented by two intense bands: a narrow band of excitonic nature with a maximum in the region of 389 nm and a wide band of green luminescence related to intrinsic defects.

Keywords: ZnO, thick films, X-ray luminescence.

Received: 26.05.2023
Revised: 05.07.2023
Accepted: 06.07.2023

DOI: 10.21883/PJTF.2023.17.56085.19641

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