Growth kinetics of III–V nanomembranes influenced by the re-emitted flux of group III species

V. G. Dubrovskii

Saint Petersburg State University

Abstract: A growth equation for III–V nanomembranes (NMs) fabricated on patterned substrates with one-dimensional array of trenches is derived considering the re-emitted flux of group V species. It is shown that the NM height increases with the pitch of trenches and for narrower trenches. Overall, the growth kinetics and the resulting morphology of III–V NMs on reflecting substrates is very different from those on adsorbing substrates, which should be carefully accounted for in the growth experiments.

Keywords: III–V compound semiconductors, nanomembranes, re-emitted flux, growth rate, modeling.

Received: 12.04.2023
Revised: 05.05.2023
Accepted: 05.05.2023

DOI: 10.21883/PJTF.2023.13.55732.19590

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