Investigation of the phenomenon of current transition EuGa$_2$S$_4$:Er$^{3+}$ crystals

O. B. Tagiyev^ab, F. A. Kazymova^a, G. S. Gadzhieva^a, T. Sh. Ibragimova^a, E. G. Asadov^a, K. O. Tagiev<sup>c

a</sup> Institute of Physics of the Ministry of Science and Education, Baku, Azerbaijan
^b Lomonosov Moscow State University in Baku, Baku, Azerbaijan
^c British Petroleum, Baku, Azerbaijan

Abstract: The results of studying the static current-voltage characteristics of EuGa$_2$S$_4$:Er$^{3+}$ crystals at room temperature are presented. The mechanism of current passage in them is revealed. The height of the potential barrier at the metal-semiconductor interface (0.9 eV), the relative permittivity of crystals (3.1), and the concentration of traps ($N\approx$ 7.14 $\cdot$ 10$^{16}$ cm$^{-3}$) were calculated, and the shape of the potential well for the electrons trapped in the traps was determined.

Keywords: current-voltage, metal-semiconductor, crystals, potential barrier, erbium.

Received: 01.02.2023
Revised: 22.02.2023
Accepted: 28.02.2023

DOI: 10.21883/PJTF.2023.10.55424.19517

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