Study of InP/GaP quantum wells grown by vapor phase epitaxy

A. I. Baranov^ab, A. V. Uvarov^ab, A. A. Maksimova^ab, E. A. Vyacheslavova^ab, N. A. Kalyuzhnyy^c, S. A. Mintairov^c, R. A. Salii^c, G. E. Yakovlev^b, V. I. Zubkov^b, A. S. Gudovskikh<sup>ab

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
^c Ioffe Institute, St. Petersburg, Russia

Abstract: We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on $n$-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21 eV, 0.30 eV and 0.93 eV.

Keywords: quantum well, capacitance-voltage profiling, electrochemical profiling.

Received: 25.10.2022
Revised: 10.01.2023
Accepted: 10.01.2023

DOI: 10.21883/PJTF.2023.06.54810.19404

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