Effect of nitrogen plasma treatment on the structural and optical properties of InGaN

V. O. Gridchin^abc, I. P. Sotnikov^bcd, R. R. Reznik^a, S. D. Komarov^e, E. V. Pirogov^b, V. V. Lendyashova^abd, K. P. Kotlyar^abc, N. V. Kryzhanovskaya^e, G. È. Cirlin<sup>abcd

a</sup> Saint Petersburg State University
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Ioffe Institute, St. Petersburg
^e National Research University "Higher School of Economics", St. Petersburg Branch

Abstract: The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor of 2.

Keywords: InGaN, silicon, nanostructures, photoluminescence, structural properties, optical properties, molecular beam epitaxy, nitrogen plasma.

Received: 06.12.2022
Revised: 26.12.2022
Accepted: 27.12.2022

DOI: 10.21883/PJTF.2023.05.54668.19452

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