Oxide/InAs(001) interface passivation with fluorine

M. S. Aksenov^ab, V. A. Golyashov^ab, O. E. Tereshchenko<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: It is shown that fluorine-containing anodic layers on the $n$-InAs(001) surface, in contrast to fluorine-free anodic layers, form an interface with unpinned Fermi level, the density of states on which near the midgap is about $\sim$10$^{11}$ eV$^{-1}$ $\cdot$ cm$^{-2}$ (78 K ). The study of the chemical composition showed that the decrease in the density of states is associated with the formation of indium and arsenic oxyfluorides near the interface.

Keywords: InAs, MIS structure, fluorine, anodic layer, interface states.

Received: 07.11.2022
Revised: 15.12.2022
Accepted: 20.12.2022

DOI: 10.21883/PJTF.2023.05.54661.19413

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