Angular dependence peculiarities of germanium sputtering yield with a focused gallium ion beam

M. A. Smirnova^ab, K. N. Lobzov^ab, V. I. Bachurin^b, L. A. Mazaletsky^ab, D. È. Pukhov^b, A. B. Churilov<sup>b

a</sup> P.G. Demidov Yaroslavl State University, Yaroslavl, Russia
^b Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences, Yaroslavl, Russia

Abstract: Angular dependences of Ge and Si sputtering yields with a 30 keV focused Ga$^+$ ion beam are reported. Comparison between experimental angular dependence of Ge sputtering yield and corresponding SDTrimSP simulation data reveals considerable differences. Thus, the experimental data exceed the simulation data at incidence angles from 0$^\circ$ to 50$^\circ$ and at larger angles they have a lower value, whereas for Si these dependences are in good agreement. The angular dependence peculiarities of Ge sputtering yield are attributed to the development and change of the surface topography at oblique ion incidence.

Keywords: germanium, ion bombardment, sputtering yield, surface topography.

Received: 26.04.2024
Revised: 28.06.2024
Accepted: 18.07.2024

DOI: 10.61011/PJTF.2024.22.59130.19975

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