P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, N. V. Fateev, “Optical gain in heavily doped Al$_{0.65}$Ga$_{0.35}$N:Si structures under continuous pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 50, Issue 21,Pages 39

Optical gain in heavily doped Al$_{0.65}$Ga$_{0.35}$N:Si structures under continuous pumping

P. A. Bokhan^a, K. S. Zhuravlev^a, D. È. Zakrevskii^ab, T. V. Malin^a, N. V. Fateev^ac

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State Technical University, Novosibirsk, Russia
^c Novosibirsk State University, Novosibirsk, Russia

Abstract: The optical gain coefficients measured in heavily doped Al$_{0.65}$Ga$_{0.35}$N:Si structures under continuous pumping with broadband radiation (190–330 nm) at room temperature. The optical gain of 212 cm$^{-1}$ was obtained under 3.2 mW/cm$^2$ of the optical pump power density, which well agrees with the data obtained with pulsed excitation. The measured value for the radiative recombination cross-section under continuous optical excitation is 10$^{-15}$ сm$^2$.

Keywords: heavily doped alxga1-xn structures, optical gain, radiative recombination cross-section.

Received: 17.05.2024
Revised: 09.07.2024
Accepted: 12.07.2024

DOI: 10.61011/PJTF.2024.21.58958.19997