Abstract:
Self-excitation of high-frequency current oscillation is observed experimentally in GaAs avalanche diodes connected in-series with ohmic load. The oscillations frequency varies from 5.3 to 8.2 GHz depending on the breakdown voltage (from 100 to 220 V), diameter (from 100 to 200 $\mu$m) and doping profile of the $p^+$–$p$–$i$–$n$–$n^+$ structure under study. Voltage and current amplitudes are in the range of dozens of volts and a few amperes. Numerical simulations reveal that self-oscillating process of generation and subsequent extraction of
non-equilibrium electron-hole package that is accompanied with screening of electrical field by non-equilibrium carries occurs in the diode. Stationary state of the diode with avalanche current is unstable on the positive differential conductance part of reverse current-voltage characteristic in absence of external resonator.
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