Abstract:
Focal plane array infrared photodetectors are highly demanded in various fields, including environmental protection, medicine and military applications. This paper presents the results of the growth of InAs/GaSb superlattice structures using molecular beam epitaxy on GaSb substrates for mid- and long-wave infrared photodetector applications. The article defines the conditions for growing GaSb buffer layers and superlattices with InSb interfacial layer. It is shown that a low arsenic concentration in the buffer layer has little effect on the structural quality of the superlattices, while the thickness of the buffer has a more significant impact. The selected growth conditions allowed for high reproducibility of the period lengths. The measured superlattice layer thicknesses were close to those specified during growth. The presence of InSb interface resulted in good optical properties for the superlattices. The high reproducibility allowed us to control the long-wavelength absorption edge by shifting it from 5.6 to 9 microns by simply adjusting the thicknesses of the InAs and GaSb layers.
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