On multi layers X-ray mirrors at about 100 eV on doped super lattice in $n$-Si nearby X-ray characteristic line

A. A. Andronov, V. I. Pozdnyakova

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Abstract: Calculation of dielectric permittivity nearby X-ray characteristic line transition in degenerate $n$-Si is given. Possibility to fabricate multilayer X-ray mirror (MXM) nearby the transition with periodic n-doping with reflection coefficient up to about 50% at 77 K is demonstrated. It is pointed out possibility to produce dynamic masks in such MXMs via Shark effect in powerful optical radiation.

Keywords: X-ray emission, multilayer X-ray mirrors, X-ray characteristic line transitions.

Received: 17.04.2024
Revised: 27.05.2024
Accepted: 28.05.2024

DOI: 10.61011/PJTF.2024.18.58628.19959

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