Synthesis of ZnO epitaxial films at room temperature with high growth rates by direct current magnetron sputtering

A. M. Ismailov^a, T. A. Guidalaeva^a, A. È. Muslimov^b, M. R. Rabadanov^a, M. Kh. Rabadanov<sup>a

a</sup> Daghestan State University, Makhachkala, Dagestan Republic, Russia
^b Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center "Kurchatov Institute", Moscow, 123182 Russia

Abstract: ZnO ceramic target ((0001)ZnO||(11$\bar2$0)Al$_2$O$_3$) epitaxial films with record-high growth rates (7 nm/s) and low epitaxy temperatures (35$^\circ$C) were obtained on sapphire substrates by direct current magnetron sputtering in an oxygen environment. It was found that an optimal substrate location in the magnetron plasma region, corresponding to a floating potential value of 9–12 V on the substrate, is a necessary condition for the growth of ZnO epitaxial films.

Keywords: ZnO, epitaxial films, magnetron sputtering method, film growth rate, sapphire substrates.

Received: 10.01.2024
Revised: 28.04.2024
Accepted: 24.05.2024

DOI: 10.61011/PJTF.2024.18.58622.19861

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