Abstract:
In this study there was constructed a model of the dependence of the random telegraphic noise (RTN) amplitude on the gate voltage and position of a single oxide trapped charge along the channel of MOSFET based on two-dimensional molybdenum disulfide. The RTN amplitude increases at gate voltages below the threshold one, and its dependence on the single charge position exhibits a maximum shifted from the channel center. This behavior of the RTN amplitude is explained, along with its dependence on the gate voltage, by its significant dependence on the drain voltage as well.
Keywords:two dimensional molybdenum disulfide, random telegraph noise, MOSFET, single oxide trapped charge.
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