N. A. Kalyuzhnyy, S. S. Kizhaev, S. A. Mintairov, A. A. Pivovarova, R. A. Salii, A. V. Chernyaev, “Photodetectors with the long-wavelength cutoff of 2.4 <nobr>$\mu$</nobr>m based on metamorphic InGaAs/InP heterostructures grown by metal-organic vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 50, Issue 17,Pages <nobr>15

Photodetectors with the long-wavelength cutoff of 2.4 $\mu$m based on metamorphic InGaAs/InP heterostructures grown by metal-organic vapor-phase epitaxy

N. A. Kalyuzhnyy^a, S. S. Kizhaev^b, S. A. Mintairov^a, A. A. Pivovarova^a, R. A. Salii^a, A. V. Chernyaev^bc

^a Ioffe Institute, St. Petersburg, Russia
^b Microsensor Technology, St. Petersburg, Russia
^c S. M. Budyonny Military Academy of Communications, St. Petersburg, Russia

Abstract: The technique for growing metamorphic InGaAs buffer layers on InP substrates was used to create photodetectors with the long-wavelength cutoff of 2.4 $\mu$m. Optical and electrical characteristics of photodetectors based on the InGaAs/InP metamorphic heterostructure and those of devices based on the GaInAsSb/GaSb isoperiodic system were compared. Instrumental applicability of the developed technique is confirmed by high reverse-bias photosensitivity and resistance of the photodetectors. The dark current values correlate with low density of threading dislocations in the photodetector active region assessed by transmission electron microscopy.

Keywords: photodetector, InGaAs/InP, metal-organic vapor-phase epitaxy, metamorphic layer, heterostructure.

Received: 22.04.2024
Revised: 08.05.2024
Accepted: 08.05.2024

DOI: 10.61011/PJTF.2024.17.58574.19966