Abstract:
It has been shown that for ultraviolet InGaN/GaN industrial LEDs in a practical temperature range from -74 to 84$^\circ$C, a decrease in the density of low-frequency noise during heating and a drop in the external quantum efficiency during cooling can occur. The observed features of the experimental dependences are explained on the basis of the physical mechanisms of carrier transport, primarily tunneling along defects and tails of the density of states in the band gap of a semiconductor.
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