Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition

A. S. Gudovskikh^ab, A. I. Baranov^a, A. V. Uvarov^a, E. A. Vyacheslavova^a, A. A. Maksimova^ab, E. V. Nikitina^a, I. P. Sotnikov<sup>acd

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
^c Ioffe Institute, St. Petersburg, Russia
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: For the first time, AlP/Si heterostructures were formed using the method of combined plasma-enhanced and atomic layer deposition and studies of their electronic properties were carried out. Experimentally estimated conduction band offset $\Delta E_C$ at the AlP/Si interface (0.35 $\pm$ 0.10 eV) is significantly less compared to that of the valence band offset. Thus AlP could be considered as an electron selective contact to Si for solar cells

Keywords: aluminum phosphide, silicon, selective contact, solar cell.

Received: 28.03.2024
Revised: 12.04.2024
Accepted: 22.04.2024

DOI: 10.61011/PJTF.2024.16.58528.19935

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