Low-temperature growth of InAs nanowires and nanosheets on Si(100) substrates

A. A. Koryakin^ab, E. V. Ubyivovk^a, K. P. Kotlyar^abc, V. V. Lendyashova^ab, R. R. Reznik^a, G. È. Cirlin<sup>abc

a</sup> Saint Petersburg State University, St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia

Abstract: The results of the study of low-temperature growth of InAs nanowires and nanosheets on Si(100) substrates by molecular beam epitaxy are presented. The morphology and structure of nanowires and nanosheets were studied by scanning and transmission electron microscopy. It was found that, during the growth of nanowires in the [110] direction, the interface between the catalyst and nanowire contains two facets: InAs(11$\bar1$) and InAs(111). A simple geometrical model of the nanowire growth has been proposed to explain the stability of these facets, and estimates for the ratio between step velocities on these facets have been obtained.

Keywords: nanowires, nanosheets, vapor–solid–solid growth mechanism, A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors.

Received: 27.09.2023
Revised: 27.09.2023
Accepted: 18.12.2023

DOI: 10.61011/PJTF.2024.07.57466.19742

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