Optical studies of InP/InAsP/InP nanoinclusions integrated into silicon

I. A. Melnichenko^ab, S. D. Komarov^a, A. S. Dragunova^a, A. A. Karaborchev^a, È. I. Moiseev^a, N. V. Kryzhanovskaya^a, I. S. Makhov^a, A. E. Zhukov<sup>a

a</sup> National Research University "Higher School of Economics", St. Petersburg Branch, St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

Abstract: Submicron InAs$_x$P$_{1-x}$/InP nanoinclusions formed by selective epitaxial growth in silicon using metal – organic vapor epitaxy and a molten drop of a group III element have been studied using confocal optical microscopy and microphotoluminescence spectroscopy. The influence of the distance between nanoinclusions on the photoluminescence intensity was investigated, and the temperature dependences of photoluminescence in the range of 77–290 K were obtained. Emission in the spectral range of 1.2 $\mu$m was obtained at room temperature.

Keywords: A$_3$B$_5$ nanoinclusions, InAsP integration on silicon, InAsP/InP.

Received: 13.11.2023
Revised: 15.11.2023
Accepted: 15.11.2023

DOI: 10.61011/PJTF.2024.05.57175.19801

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