Contribution of additional waveguides to heterostructure resistance of high-power coupled-waveguide-based InGaAs/GaAs/AlGaAs edge-emitting lasers

A. S. Payusov^a, G. O. Kornyshov^ab, N. Yu. Gordeev^a, A. E. Zhukov<sup>c

a</sup> Ioffe Institute, St. Petersburg, Russia
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^c National Research University "Higher School of Economics", St. Petersburg Branch, St. Petersburg, Russia

Abstract: The results of numerical simulation of band diagrams and current-voltage curves of edge-emitting lasers are presented, where two additional waveguides located on the $n$-side of the heterostructure are used to suppress parasitic optical modes of the broadened waveguide. It is shown that the considered design allows obtaining the ultimate shift of the active region towards the $p$-emitter while preserving the fundamental mode lasing. The contribution of additional waveguides to the specific series resistance of the laser heterostructure estimated to be as low as 1.9 $\cdot$ 10$^{-6}$ $\Omega$ $\cdot$ cm$^2$, which does not exceed 5% of the total series resistance of up-to-date high-power InGaAs/GaAs/AlGaAs lasers.

Keywords: semiconductor laser, optical waveguide, series electrical resistance.

Received: 20.09.2023
Revised: 20.10.2023
Accepted: 22.10.2023

DOI: 10.61011/PJTF.2024.02.56978.19734

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