Measurement of local stresses in the surface layers of multilayer structures by the null method using phase matching

M. F. Stupak^a, S. A. Dvoretskii^bc, N. N. Mikhailov^bd, S. N. Makarov^a, A. G. Yelesin<sup>a

a</sup> Technological Design Institute of Scientific Instrument Engineering, Siberian Branch RAS, Novosibirsk, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^c Tomsk State University, Tomsk, Russia
^d Novosibirsk State University, Novosibirsk, Russia

Abstract: A new null method for measuring the values of residual mechanical stresses in surface layers has been developed, based on the measurement of the second harmonic generation signal caused by the anisotropy of polarization of the reflected IR laser radiation from the surface of the rotated sample under study with the subsequent passage of radiation through a nonlinear crystal oriented to the phase matching for the anisotropic polarization. Quantitative data of the amplitude of the second harmonic signal from the magnitude of the stresses were obtained. The residual stresses in the HgCdTe surface layer of the HgCdTe/CdTe/ZnTe/GaAs multilayer structure grown by the MBE method have been measured, which is equal to 0.0045 N. The observed fine structure of the second harmonic signal allows us to conclude about the complex structure of residual stresses.

Keywords: stresses, second harmonic, polarization, semiconductor structure.

Received: 24.07.2023
Revised: 29.09.2023
Accepted: 11.10.2023

DOI: 10.61011/PJTF.2024.01.56923.19692

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