Features of interference phenomena in ZnO films obtained by the magnetron deposition method

A. M. Ismailov^a, A. È. Muslimov<sup>b

a</sup> Daghestan State University, Dagestan Republic, Russia
^b National Research Centre "Kurchatov Institute", Moscow, Russia

Abstract: The processes of controlled texturing of ZnO films on the $r$-plane with a gold buffer layer were studied, taking into account the free potential during magnetron deposition and interference phenomena. It has been shown that, depending on the position of the substrate in the discharge volume, both smooth [001]-textured (single layer) and rough bi-textured (bi-layer) ZnO films can be formed. The classical interference pattern is observed only in smooth textured films. Thus there is the perspective that synthesized transparent film structures based on ZnO can be used as interference sensors for assessing the refractive index of the environment.

Keywords: ZnO, magnetron deposition, interference, refractive index sensor.

Received: 05.06.2023
Revised: 07.09.2023
Accepted: 02.10.2023

DOI: 10.61011/PJTF.2024.01.56918.19647

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