A. P. Baraban, V. A. Dmitriev, V. A. Prokof’ev, V. E. Drozd, E. O. Filatova, “Photoluminescence of Ta$_{2}$O$_{5}$ films formed by the molecular layer deposition method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 7,Pages 10

This article is cited in 4 papers

Photoluminescence of Ta$_{2}$O$_{5}$ films formed by the molecular layer deposition method

A. P. Baraban, V. A. Dmitriev, V. A. Prokof’ev, V. E. Drozd, E. O. Filatova

Saint Petersburg State University

Abstract: Ta$_{2}$O$_{5}$ films of different thicknesses (20–100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance–voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si–Ta$_{2}$O$_{5}$–field electrode system. A model of the electronic structure of Ta$_{2}$O$_{5}$ films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

Keywords: Technical Physic Letter, Dynamic Random Access Memory, Tantalum Pentoxide, Oxidize Silicon Substrate, Ta$_{2}$O$_{5}$ Film.

Received: 17.09.2015